4
RF Device Data
Freescale Semiconductor
MRF7S18125AHR3 MRF7S18125AHSR3
Figure 1. MRF7S18125AHR3(HSR3) Test Circuit Schematic
Z8 0.200″
x 0.083
Microstrip
Z9 1.116″
x 0.083
Microstrip
Z10 0.227″
x 0.083
Microstrip
Z11 1.175″
x 0.080
Microstrip
Z12, Z13 0.760″
x 0.080
Microstrip
PCB Taconic TLX-8 RF35, 0.031″, εr
= 2.55
Z1 0.227″
x 0.083
Microstrip
Z2 1.180″
x 0.083
Microstrip
Z3 0.135″
x 0.083
Microstrip
Z4 0.568″
x 1.000
Microstrip
Z5 0.092″
x 1.000
Microstrip
Z6 0.095″
x 1.000
Microstrip
Z7 0.565″
x 1.000
Microstrip
VBIAS
VSUPPLY
RF
OUTPUT
RF
INPUT
DUT
C1
C8
R1
Z1
Z2
Z3
Z4
C7
R2
Z11
R3
Z5
Z7
Z8
C14
Z9
C12
C13
Z12
C9
C2
C6
+
Z6
Z10
C3
C11
C4
C5
Z13
C15
C10
Table 5. MRF7S18125AHR3(HSR3) Test Circuit Component Designations and Values
Part
Description
Part Number
Manufacturer
C1
1 μF, 50 V Chip Capacitor
C3216X5R1H105K
TDK
C2, C3, C4, C5
4.7 μF, 50 V Chip Capacitors
C4532X5R1H475M
TDK
C6
220 μF, 63 V Electrolytic Chip Capacitor
2222 136 68221
Vishay
C7, C8, C9, C10, C11
8.2 pF Chip Capacitors
ATC100B8R2BT500XT
ATC
C12, C13, C14
0.2 pF Chip Capacitors
ATC100B0R2BT500XT
ATC
C15
0.5 pF Chip Capacitor
ATC100B0R5BT500XT
ATC
R1, R2
10 kΩ, 1/4 W Chip Resistors
CRCW12061001FKEA
Vishay
R3
10 Ω, 1/4 W Chip Resistor
CRCW120610R0FKEA
Vishay
相关PDF资料
MRF7S18125BHSR5 MOSFET RF N-CH CW 125W NI780
MRF7S18170HSR5 MOSFET RF N-CH NI-880S
MRF7S19080HSR5 MOSFET RF N-CH NI-780S
MRF7S19100NR1 MOSFET RF N-CH 28V 29W TO270-4
MRF7S19120NR1 MOSFET RF N-CH TO-270-4
MRF7S19170HSR5 IC MOSFET RF N-CHAN NI-880S
MRF7S19210HSR5 MOSFET RF N-CH 28V 63W NI780S
MRF7S21080HSR5 MOSFET RF N-CH 22W NI-780S
相关代理商/技术参数
MRF7S18125BHR3 功能描述:射频MOSFET电源晶体管 HV7 1.9GHZ CW 125W NI780 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRF7S18125BHR5 功能描述:射频MOSFET电源晶体管 HV7 1.9GHZ CW 125W NI780 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRF7S18125BHSR3 功能描述:射频MOSFET电源晶体管 HV7 1.9GHZ CW 125W NI780 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRF7S18125BHSR5 功能描述:射频MOSFET电源晶体管 HV7 1.9GHZ CW 125W NI780 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRF7S18170H 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors (N-Channel Enhancement-Mode Lateral MOSFETs)
MRF7S18170HR3 功能描述:射频MOSFET电源晶体管 1.8GHZ HV7 WCDMA NI880H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRF7S18170HR5 功能描述:射频MOSFET电源晶体管 1.8GHZ HV7 WCDMA NI880H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRF7S18170HSR3 功能描述:射频MOSFET电源晶体管 HV7 1.8GHZ 50W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray